? semiconductor component s industries, llc, 2017 1 publication order number : march 2017 - rev. 0 nvats4a102pz/d www.onsemi.com nvats4a102pz power mosfet ? 30 v, 18.5 m ? , ? 44 a, p-channel the nvats4a102pz is a power mosfet designed for compact size and high efficiency which can achi eve high thermal performance. aec-q101 qualified mosfet and ppap capable suitable for automotive applications. features ? low on-resistance ? high current capability ? 100% avalanche tested ? aec-q101 qualified and ppap capable ?? atpak package is pin-compatible with dpak (to-252) ? pb-free, halogen free and rohs compliance typical applications ? reverse battery protection ? load switch ? automotive front lighting ? automotive body controllers specifications absolute maximum rating at ta = 25 ? c (note 1) parameter symbol value unit drain to source voltage v dss ? 30 v gate to source voltage v gss ? 20 v drain current (dc) i d ? 44 a drain current (pulse) pw ? 10 ? s, duty cycle ? 1% i dp ? 132 a power dissipation tc = 25 ? c p d 48 w operating junction and storage temperature tj, tstg ? 55 to +175 ? c avalanche energy (single pulse) (note 2) e as 58 mj avalanche current (note 3) i av ? 20 a note 1 : stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : v dd = ? 10 v, l = 200 ? h, i av = ? 20 a 3 : l 200 ? h, single pulse thermal resistance ratings parameter symbol value unit junction to case steady state (tc = 25 ? c) r ? jc 3.1 ? c/w junction to ambient (note 4) r ? ja 80.4 ? c/w note 4 : surface mounted on fr4 board using a 130 mm 2 , 1 oz. cu pad. electrical connection p-channel v dss r ds (on) max i d max ? 30 v 18.5 m ? @ ? 10 v ? 44 a 31 m ? @ ? 4.5 v atp102 lot no. 1 2 3 4 atpa k ordering information see detailed ordering and shipping information on page 6 of this data sheet. marking 1 3 2,4 1 : gate 2 : drain 3 : source 4 : drain
nvats4a102pz www.onsemi.com 2 electrical characteristics at ta ? 25 ? c (note 5) parameter symbol conditions value unit min typ max drain to source breakdown voltage v( br ) dss i d = ? 1 ma, v gs = 0 v ? 30 v zero-gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 ? a gate to source leakage current i gss v gs = ? 16 v, v ds = 0 v ? 10 ? a gate threshold voltage v gs (th) v d s = ? 10 v, i d = ? 1 ma ? 1.2 ? 2.6 v forward transconductance g fs v ds = ? 10 v, i d = ? 20 a 29 s static drain to source on-state resistance r ds (on)1 i d = ? 20 a, v gs = ? 10 v 14 18.5 m ? r ds (on)2 i d = ? 10 a, v gs = ? 4.5 v 22 31 m ? input capacitance ciss v ds = ? 10 v, f = 1 mhz 1,490 pf output capacitance coss 360 pf reverse transfer capacitance crss 270 pf turn-on delay time t d (on) see fig.1 11 ns rise time t r 135 ns turn-off delay time t d (off) 135 ns fall time t f 185 ns total gate charge qg v ds = ? 15 v, v gs = ? 10 v, i d = ? 40 a 34 nc gate to source charge qgs 4.2 nc gate to drain ?miller? charge qgd 11.5 nc forward diode voltage v sd i s = ? 40 a, v gs = 0 v ? 0.99 ? 1.5 v note 5 : product parametric performance is indicated in the elec trical characteristics for the listed test conditions, unless o therwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. fig.1 switching time test circuit pw = 10 s d.c. 1% p. g 50 g s d i d = --20 a r l = 0.75 v dd = --15 v v out v in 0 v --10 v v in nvats4a102pz
nvats4a102pz www.onsemi.com 3 g fs -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf forward diode voltage, v sd -- v source current, i s -- a forward transconductance, g fs -- s ciss, coss, crss -- v ds --50 --25 175 0 --30 --10 --15 --20 --25 -- 5 1000 100 2 2 --0.1 --1.0 23 57 3 --1.2 --1.0 --1.1 --0.6 --0.5 --0.4 --0.8 --0.9 --0.7 --0.3 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --0.1 --1.0 --10 --100 5 7 7 2 10 1.0 5 7 3 2 2 --10 357 --100 57 23 --0.1 --1.0 23 57 2 --10 357 --100 57 23 0 25 50 75 100 125 150 3 5 3 5 7 7 75 c 25 c tc= --25 c --25 c tc=75 c single pulse tc= --25 c 25 c 75 c tc=75 c 25 c --25 c ciss crss 10 100 2 3 5 5 7 7 7 2 3 t d (off) v dd = --15v v gs = --10v f=1mhz t r --0.6 --0.4 --0.2 --0.8 --1.0 --1.2 --2.0 --1.4 --1.6 --1.8 0 0 -- 5 --10 --40 --35 --25 --30 --15 --20 0 -- 5 --10 --50 --35 --40 --30 --25 --45 --20 --15 0 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 -- 8 -- 9 --7 --10 --11 --16 --12 --14 --15 --13 0 50 30 20 10 5 10 50 40 35 25 20 15 30 45 --0.5 --1.5 --2.0 --1.0 --2.5 --4.5 --4.0 --5.0 --3.5 --3.0 0 --4.0v v gs = --3.5v --16.0v v ds = --10v single pulse t f 25 c v gs = --4.5v, i d = --10a v gs = --10v, i d = --20a --8.0v coss t d (on) --4.5v --6.0v --10.0v i d = --10a --20a v ds = --10v single pulse tc=25 c single pulse v gs =0v single pulse tc=25 c single pulse 40 45 35 25 15 5
nvats4a102pz www.onsemi.com 4 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v s o a drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc power dissipation, p d -- w case temperature, tc -- c 0 5 10 25 20 35 30 15 40 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --15v i d = --40a 0 0 25 50 75 100 125 175 150 40 30 20 10 60 200 i dp = - -132a ( pw 10 s ) i d = --44a 1ms 100ms 10ms dc operation operation in this area is limited by r ds (on). 100 s 10 s --0.1 --1.0 --10 --0.1 --1.0 --10 --100 tc=25 c single pulse e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 200 50 --200 --50 0.01 0.1 1.0 10 r ? jc -- pulse time pulse time, pt -- s thermal resistance, r ? jc -- ? c/w 0.00001 0.0001 0.001 0.01 0.1 1.0 10 duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 single pulse r ? jc =3.1 ? c/w
nvats4a102pz www.onsemi.com 5 package dimensions unit : mm 1 : gate 2 : drain 3 : source 4 : drain dpak (single gauge) / atpak case 369am issue o 3 2 1 4 6.5 6.7 1.6 2 2.3 2.3 1.5 recommended soldering footprint
nvats4a102pz www.onsemi.com 6 on semiconductor and the on semiconductor logo are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries in the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and othe r intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the app lication or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulations and safety require ments or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life sup port systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended fo r implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer sh all indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, d amages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resal e in any manner. ordering information device marking package shipping (qty / packing) NVATS4A102PZT4G atp102 dpak(single gauge) / atpak (pb-free / halogen free) 3,000 / tape & reel ? for information on tape and reel specifications, including part orientation and tape sizes, plea se refer to our tape and reel packaging specifications brochure, brd8011/d. http://www.ons emi.com/pub_link/collateral/brd8011-d.pdf note on usage : since the nvats4a102pz is a mosfet produ ct, please avoid using this device in the vicinity of highly charged objects.
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